Layered perovskites with giant spontaneous polarizations for nonvolatile memories.

نویسندگان

  • Uong Chon
  • Hyun M Jang
  • M G Kim
  • C H Chang
چکیده

A series of titanate-based layered perovskites having large values of the spontaneous polarization P(s) were developed for their applcations to nonvolatile ferroelectric random access memories. Among these, the Nd-modified bismuth titanate [Bi(4-x)Nd(x)Ti(3)O(12) (BNdT)] system exhibited the most remarkable ferroelectric properties. The c-axis oriented BNdT capacitor was characterized by a switchable remanent polarization 2P(r) of over 100 microC/cm(2) and imprinting and fatigue-free behavior. The active Ti site responsible for the giant P(s) was identified with the help of Rietveld analysis, x-ray absorption near-edge structure study, and ab initio quantum computations.

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عنوان ژورنال:
  • Physical review letters

دوره 89 8  شماره 

صفحات  -

تاریخ انتشار 2002